【Device Papers】Trap States in p-NiO/n-Ga₂O₃ heterojunctions on Czochralski β-Ga₂O₃ crystals

      Researchers from the National University of Science and Technology MISIS have published a dissertation titled "Trap States in p-NiO/n-Ga₂O₃ heterojunctions on Czochralski β-Ga₂O₃ crystals" in ECS Journal of Solid State Science and Technology.

Abstract

      Heterojunctions (HJs) of p-NiO/n-Ga2O3 were prepared by deposition of thin films of p-NiO by ion beam sputtering on bulk nominally undoped (100) oriented n-Ga2O3 samples cleaved from Czochralski-grown (010) oriented crystal. Electrical properties and deep traps spectra were studied and compared with those obtained for similar samples with Ni Schottky diodes. Characteristic features of the NiO/Ga2O3 HJs are the built-in voltage of over 2V compared to 1V in Ni Schottky diodes, a strong frequency dispersion of capacitance due to the presence of high density over 1018 cm-3 of Ec-0.16 eV traps in the thin region adjacent to the NiO/Ga2O3 interface. For heterojunction diodes the strong increase of reverse current occurs at a much higher voltage than for Schottky diodes (120V versus 60V).

DOI：

https://doi.org/10.1149/2162-8777/ad9ace