【Device Papers】Vertical β-Ga₂O₃ Schottky Barrier Diode with the Composite Termination Structure

      Researchers from the Xidian University have published a dissertation titled "Vertical β-Ga₂O₃ Schottky Barrier Diode with the Composite Termination Structure" in ECS Journal of Solid State Science and Technology.

Abstract

      In this work, β-Ga₂O₃ based Schottky barrier diodes (SBDs) with a composite termination structure of the ZnNiO thin alloy films are reported. β-Ga₂O₃ SBDs with the junction termination extension structure of the wide-bandgap p-type ZnNiO achieve a breakdown voltage (V_br) of 2040 V and a specific on-resistance R_on,sp of 3.48 mΩ·cm², contributing a power figure of merit (PFOM, V_br²/R_on,sp) of 1.20 GW cm⁻². Meanwhile, we demonstrated high-performance vertical β-Ga₂O₃ SBDs with the bevel junction termination extension (BJTE) structure, which the R_on,_sp,V_br and BFOM are 4.21 mΩ·cm², 2704 V, and 1.74 GW cm⁻², respectively. Technology computer aided design simulations show that BJTE structure significantly optimizes the surface electric field of β-Ga₂O₃ drift layer. These devices make a significant step to achieve high performance β-Ga₂O₃ power devices by implementing a composite termination structure.

DOI：

https://doi.org/10.1149/2162-8777/ad9a7b