【Device Papers】Effect of p-NiOx junction termination extension on interface states in NiOx/β-Ga₂O₃ heterojunction diodes

      Researchers from the Xidian University have published a dissertation titled "Effect of p-NiO_x junction termination extension on interface states in NiO_x/β-Ga₂O₃ heterojunction diodes" in Materials Science in Semiconductor Processing.

Abstract

      Vertical p-n hetero-junction diodes (HJDs) were fabricated by employing NiO_x/β-Ga₂O₃ with p-NiO_x junction termination extension (JTE). It is found that NiO_x JTE leads to reduce interface states density in devices based on a smaller voltage hysteresis interval in I-V hysteresis analysis and a decrease in parasitic capacitance in C-V characteristics. It is due to the fact that JTE help to the retrain the activation of interface states. This study provides a basic understanding of interface states and lays the groundwork for the development of guiding principles for the design of Ga₂O₃ HJDs.

DOI：

https://doi.org/10.1016/j.mssp.2024.108987