
【International Papers】Anisotropic below bandgap harmonic generation in β-gallium oxide
日期:2025-02-17阅读:97
Researchers from the Universidade de Lisboa have published a dissertation titled "Anisotropic below bandgap harmonic generation in β-gallium oxide" in Optics Express.
Abstract
Harmonic generation in wide bandgap semiconductors and dielectrics has attracted a surge of interest as a compact solid-state light source and as a method of mapping the band structure of the material itself. Longer driving wavelengths can support longer electron trajectories and suppress interband transitions, yielding spectra sensitive to crystal orientation and band shapes. Here, we combine a long wavelength laser to drive harmonic generation in a wide band-gap material with applications in photonics and power electronics, beta-gallium oxide (β-Ga2O3). We generate harmonics up to the ninth order (H9=3.7 eV) in air, with a ≈ 3.0 μm, 100 kHz, 40 fs mid-infrared (MIR) driving laser in (100) and (010) oriented single crystals of β-Ga2O3. We observe odd and even harmonics, spectral interference, and the strong anisotropic response of both odd and even harmonics to the incident laser polarization. Our results are explained in terms of the electronic structure and macroscopic optical properties of β-Ga2O3.

Fig. 1. (a) Schematic illustration of the experimental setup to generate harmonics in (100) and (010) oriented single crystals β-Ga2O3 at a driving wavelength of ≈ 3.0 um. (b) Spatial profile of the MIR pulses recorded after the wedge by CCD camera. (c) Spectrum of the MIR laser, spectral ranging from 2.6 um to 3.3 um with Fourier transform limited of 35 fs. Here, IR: infrared, W: wedge M: mirror, C: crystal, L1 and L2: lenses.

Fig. 2. Spectral measurements of below bandgap harmonics in (100) and (010) oriented single crystals β-Ga2O3 at ≈ 3.0 um driving wavelength at an estimated peak intensity of ≈ 1 × 1013 W cm−2. (a) (100) β-Ga2O3 crystal, acquisition time for H3 is 20 ms, H4 & H5 is 40 ms, H6 & H7 it is 100 ms, while for H8 & H9 it is 200 ms (b) (010) β-Ga2O3 crystal, acquisition time for H3, H4, H6 and H7 is 100 ms, while for H5 it is 30 ms and for H8 & H9 is 200 ms.
DOI:
doi.org/10.1364/OE.525696