【Domestic Papers】Southwestern Institute of Physics——Si-implanted β-Ga₂O₃/CuGaO₂ p-n junction for high-performance self-powered UV photodetection

      Researchers from the Southwestern Institute of Physics have published a dissertation titled "Si-implanted β-Ga₂O₃/CuGaO₂ p-n junction for high-performance self-powered UV photodetection" in Journal of Alloys and Compounds.

Abstract

      Recently, Ga₂O₃-based ultraviolet photodetectors have gained significant attention due to their inherent advantages for solar-blind UV detection, with promising applications in civil, medical, and environmental monitoring. In our study, we selected CuGaO₂ as the p-type material and utilized a radio-frequency reactive magnetron sputtering system for fabrication. The resulting CuGaO₂/Ga₂O₃ heterojunction exhibited a type-II band alignment, which contributed to a remarkable light-to-dark current ratio of 5 × 10⁴ at a bias of 10 V. When illuminated with 254 nm light, we recorded a peak photoresponsivity of 245 mA·W⁻¹, with rise time of 0.46 seconds and 1.2 seconds for the decay time. The crystalline Ga₂O₃, produced via MOCVD, demonstrated enhanced mobility through silicon ion implantation, showcasing significant absorption of deep-UV light. The type-II band alignment of the heterojunction with CuGaO₂ is accountable for these exceptional detection and rectifying capabilities. Our findings offer an economical and efficient route for the mass production of UV photodetectors.

DOI：

doi.org/10.1016/j.jallcom.2024.178022