【Epitaxy Papers】Surface patterning of wide-gap semiconducting β-Ga₂O₃ thin films by area selective crystallization via room-temperature excimer laser annealing and low toxic wet-etching processes

      Researchers from the Kanagawa Institute of Industrial Science and Technology have published a dissertation titled "Surface patterning of wide-gap semiconducting β-Ga₂O₃ thin films by area selective crystallization via room-temperature excimer laser annealing and low toxic wet-etching processes" in Applied Physics Express.

Abstract

      In the present study, we have developed a fully room-temperature and low toxic surface-patterning method for β-Ga₂O₃, where consists of the area selective laser-induced crystallization of amorphous Ga₂O₃ thin films and acid-solution etching processes. Highly (−201)-oriented crystalline β-Ga₂O₃ thin films with ~70 nm thickness on α-Al₂O₃ (0001) substrates were obtained by a combination of room-temperature deposition process and the subsequent excimer laser annealing at a deep-ultraviolet wavelength of 248 nm. In conclusion, the area selective crystallized β-Ga₂O₃ micropatterns were obtained by ultrasonic wet etching with 40% H₃PO₄ aqueous solution to remove amorphous regions.

DOI：

https://doi.org/10.35848/1882-0786/ada247