【Device Papers】Performance Analysis of a two-stage Ga₂O₃ Voltage Multiplier

      Researchers from the University at Buffalo have published a dissertation titled "Performance Analysis of a two-stage Ga₂O₃ Voltage Multiplier" in 2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications(WiPDA).

Abstract

      Ga₂O₃ devices have the potential to replace SiC and GaN devices in high voltage power electronic applications. While development of Ga₂O₃ devices is in its infancy, a clearer picture on its applications will prove to be useful in the future. This paper provides a performance comparison of a commercially available SiC Schottky diode and a Ga₂O₃ Schottky diode, with similar electrical characteristics, fabricated in the authors’ university. The diodes are implemented in a two-stage Half-Wave Cockcroft-Walton Voltage Multiplier (VM) application and tested via SPICE simulations. The behavior of both VMs are evaluated and compared in terms of efficiency, output ripple, and voltage gain.

DOI：

https://doi.org/10.1109/WiPDA62103.2024.10773334