【Device Papers】Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices

      Researchers from the University of Arkansas have published a dissertation titled "Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices" in 2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).

Abstract

      The integration of gallium oxide (Ga₂O₃) in electronic packaging has gained significant attention in recent research due to its promising properties. Despite this growing interest, the technology remains predominantly at the academic research stage, largely due to a lack of comprehensive data on the packaging process. Die attachment is a crucial factor for establishing functional and reliable semiconductor packages. This study sheds light on various factors that can affect the bonding strength of Ga₂O₃ chips on conventional direct bonded copper (DBC). Several samples were prepared by attaching Ga₂O₃ and Si chips onto gold-plated DBCs using various die attachment materials and methods. The bonding strength of each sample was evaluated through shear testing. The results indicated that surface roughness, die attachment method, die attachment material, metallization, and chip size significantly influenced the bonding strength.

DOI：

https://doi.org/10.1109/WiPDA62103.2024.10773288