【Domestic Papers】Xi'an University of Science and Technology——Current blocking layer enables enhanced NiO/β-Ga₂O₃ heterojunction vertical MOSFET with a higher power figure of merit

      Researchers from the Xi'an University of Science and Technology have published a dissertation titled "Current blocking layer enables enhanced NiO/β-Ga₂O₃ heterojunction vertical MOSFET with a higher power figure of merit" in Engineering Research Express.

Abstract

      To address the challenges of P-type doping in β-Ga₂O₃ material and the low breakdown voltage of junctionless MOSFETs, this study introduces the first investigation of a vertical enhanced heterojunction β-Ga₂O₃ metal-oxide-semiconductor field-effect transistor (MOSFET) with a NiO current blocking layer (CBL), employing the Sentaurus TCAD software. The results demonstrate that by adjusting the thickness and concentration of the CBL and epitaxial layers, the threshold voltage of the device oscillates between 2.8 V and 5.1 V, and the enhancement structure is successfully realized. The optimised device exhibits a current switching ratio exceeding 10⁹, a specific on-resistance (R_on,sp) of 9.01 mΩ·cm², a breakdown voltage of 6061.6 V, and a power figure of merit as high as 4.08 GW cm⁻². This work is instructive for the design of NiO/β-Ga₂O₃ heterojunction enhanced vertical MOSFET power devices and for the future development of β-Ga₂O₃ heterojunction power devices.