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【International Papers】Pre-Melting-Assisted Impurity Control of β-Ga₂O₃ Single Crystals in Edge-Defined Film-Fed Growth
日期：2025-03-03阅读：67
Researchers from the Korea Institute of Ceramic Engineering and Technology have published a dissertation titled "Pre-Melting-Assisted Impurity Control of β-Ga2O3 Single Crystals in Edge-Defined Film-Fed Growth" in Nanomaterials.
Abstract
This study reveals the significant role of the pre-melting process in growing high-quality (100) β-Ga2O3 single crystals from 4N powder (99.995% purity) using the edge-defined film-fed growth (EFG) method. Among various bulk melt growth methods, the EFG method boasts a fast growth rate and the capability of growing multiple crystals simultaneously, thus offering high productivity. The pre-melting process notably enhanced the structural, optical, and electrical properties of the crystals by effectively eliminating impurities such as Si and Fe. Specifically, employing a 100% CO2 atmosphere during pre-melting proved to be highly effective, reducing impurity concentrations and carrier scattering, which resulted in a decreased carrier concentration and an increased electron mobility in the grown Ga2O3 single crystals. These results demonstrate that pre-melting is a crucial technique for substantially improving crystal quality, thereby promising better performance in β-Ga2O3-based device applications.
Figure 1. SEM images of (a) 4N and (b) 5N β-Ga2O3 powders.
Figure 2. GDMS analysis of impurity composition in 4N and 5N β-Ga2O3 powders. Donor-like impurities (Sn, Si, Al, and Cr, marked in blue) and acceptor-like impurities (Fe, Mg, and Ca, marked in red) are identified.
DOI：
doi.org/10.3390/nano15010007
