【Substrate Papers】Effect of annealed temperature on photoluminescence properties of Ga₂O₃:Tb³⁺ materials

      Researchers from the Guilin University of Electronic Technology have published a dissertation titled " Effect of annealed temperature on photoluminescence properties of Ga₂O₃:Tb³⁺  materials " in Materials Letters.

Abstract

      Tb-doped β-Ga₂O₃ fluorescent materials were synthesized via the hydrothermal method to study the impact of annealing temperature on crystal structure, morphology, and fluorescence properties using XRD, SEM, EDS and PL spectroscopy. XRD confirmed successful Tb³⁺ doping, with crystal structures of GaOOH, α-Ga₂O₃, and β-Ga₂O₃ observed at different annealing stages. SEM showed that unannealed samples had small nanoparticle agglomerates, while annealed samples formed clusters. EDS confirmed uniform Tb distribution. PL spectra showed characteristic Tb³⁺ emissions with peaks at approximately 490, 545, 586 and 622 nm, corresponding to the ⁵D₄ → ⁷F₆, ⁵D₄ → ⁷F₅, ⁵D₄ → ⁷F₄ and ⁵D₄ → ⁷F₃ transitions, respectively. The emission intensity reached its peak at 800 °C, approximately 3.2 times that of the unannealed sample. Additionally, the excitation and emission mechanisms of Tb³⁺ were briefly analyzed.

DOI：

https://doi.org/10.1016/j.matlet.2025.138029