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【International Papers】Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C⁺ ion beams
日期：2025-03-04阅读：67
Researchers from the L.N. Gumilyov Eurasian National University have published a dissertation titled "Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams" in Optical Materials: X.
Abstract
In this work the effect of an intense pulsed ion irradiation with a high flux ∼1020 cm−2s−1 on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method and had amorphous structure. A part of deposited films was annealed in the air environment (900 °C, 1 h) for synthesis of β-Ga2O3 phase. Obtained films were subjected to the intense pulsed ion irradiation (ion energy - up to 200 keV, pulse duration - 100 ns, current density on the target - up to 30 A/cm2, number of pulses - 3). The influence of irradiation on optical absorption and photoluminescence spectra, field and temperature dependencies of dark and photoconductivity were investigated. The probable nature of growth defects is discussed, and a scheme of electronic transitions that determine optical properties is proposed.
Fig. 1. X-ray diffraction patterns of samples before (1, 2) and after (3, 4) annealing, before (1, 3) and after irradiation (2, 4). Curves obtained in GXRD mode. The black arrows mark the positions of the β-Ga2O3 phase corresponding reflexes according to JCPDS card No. 41–1103.
Fig. 2. Dependences of dark current Id(U) and photoconductivity current Iph(U) in crystalline (a) and amorphous films (b) and dependence of the photosensitivity coefficient K(U) of films on applied voltage U before and after irradiation.
DOI：
doi.org/10.1016/j.omx.2025.100399
