【Epitaxy Papers】Surface Quality Improvement Mechanism of ICP Etching for Ga₂O₃ Schottky Barrier Diode

      Researchers from the Fuzhou University have published a dissertation titled " Surface Quality Improvement Mechanism of ICP Etching for Ga₂O₃ Schottky Barrier Diode " in Micro and Nanostructures.

Abstract

      Optimized inductively coupled plasma (ICP) etching process can improve the surface quality of β-Ga₂O₃ thin film to enhance the power figure of merit of β-Ga₂O₃ Schottky barrier diodes (SBDs). However, the mechanism of surface quality improvement of ICP etching is not yet clear. In this letter, we verified that the surface qualities of β-Ga₂O₃ SBDs could be modified by varying the ratios of BCl₃ and Ar etching plasmas. Moreover, electrical performance tests were conducted to verify that the improved surface quality can enhance the electrical properties. Benefitted from the high surface quality of β-Ga₂O₃ epitaxial layer, the β-Ga₂O₃ SBD without termination structure exhibits a low specific on-resistance (R_on,_sp) of 4 mΩ·cm² and high breakdown voltage (BV) of 1500 V. These results can pave the way for the preparation of high-performance β-Ga₂O₃ power SBDs.

DOI：

https://doi.org/10.1016/j.micrna.2025.208073