【Others Papers】Enhanced photocatalytic properties of Ge-doped Ga₂O₃ nanostructures synthesized via hydrothermal method

      Researchers from the Korea Aerospace University have published a dissertation titled "Enhanced photocatalytic properties of Ge-doped Ga₂O₃ nanostructures synthesized via hydrothermal method" in Semiconductor Science and Technology.

Abstract

      Ge-doped (1.4 at. %) β-Ga₂O₃ nanostructures are successfully synthesized using the hydrothermal method followed by annealing at 1000 °C in an O₂ atmosphere. The crystal structures and morphologies of both intrinsic and Ge-doped β-Ga₂O₃ nanostructures are analyzed using high-resolution x-ray diffraction, field-emission scanning electron microscopy, transmission electron microscope, and energy dispersive spectroscopy. Photoluminescence measurements are also performed to investigate defect-related energy levels within the bandgap. The photocatalytic activity is evaluated through the degradation of methylene blue in an aqueous solution. Ge-based precipitates form when the Ge concentration exceeds 1.4 atomic percent in the β-Ga₂O₃ nanostructures. As with other dopants such as Sn, Al, and Cr, this controlled incorporation of Ge significantly enhances the photocatalytic properties and potentially improves the electronic and optical properties of Ga₂O₃-based devices.

DOI：

https://doi.org/10.1088/1361-6641/ada9cd