【Device Papers】Modeling of β-Ga₂O₃ based double gate drain extended junction less FET and its parameter extraction methodology

      Researchers from the National Institute of Technology Karnataka have published a dissertation titled "Modeling of β-Ga₂O₃ based double gate drain extended junction less FET and its parameter extraction methodology" in Modelling and Simulation in Materials Science and Engineering.

Abstract

      A static current model of β—Gallium Oxide (β-Ga₂O₃) based double gate drain extended junction less field effect transistor (DG-DeJLFET) is proposed. The model consists of two voltage-controlled current sources connected in series. One of the current sources accounts for the operation of the junction less field effect transistor whereas, the other takes care of the drift region current. The model is formulated by considering the mobility degradation caused by moderately elevated electric fields. A parameter extraction methodology for this model is also proposed by considering the dominance of certain parameters in the specific regions of operation. In general, the parameter extraction technique is based on the variation in the device current behavior at moderate electric fields. The proposed parameter extraction methodology is validated by comparing the results with the data obtained from the TCAD simulation.

DOI：

https://doi.org/10.1088/1361-651X/ada819