【Device Papers】Correlation between Experimental and Modeled Capacitance-Voltage Characteristics of Ga₂O₃ Schottky Barrier Diode in Temperature Range of 300 to 673K

      Researchers from the Korea Aerospace University have published a dissertation titled "Correlation between Experimental and Modeled Capacitance-Voltage Characteristics of Ga₂O₃ Schottky Barrier Diode in Temperature Range of 300 to 673K" in Physica B: Condensed Matter.

Abstract

      The experimental and modeling results of the capacitance-voltage characteristics of a Pt/Ga₂O₃ Schottky barrier diode (SBD) are correlated in the temperature range of 300–673 K, where the modeling is conducted using technology computer-aided design (TCAD) simulations. The Pt/Ga₂O₃ SBD displays well-behaved diode performance and a rectification ratio of about 10⁶ at ±1.5 V, which correlates well with the TCAD modeling. The temperature-independent behavior of the reverse current as temperature increases is attributed to the high-quality depletion layer, which prevents the presence of additional free charges. The capacitance value increases slightly with temperature due to the reduction of the depletion width, which also correlates well with the TCAD modeling.

DOI：

https://doi.org/10.1016/j.physb.2025.416950