【Epitaxy Papers】Ultraviolet Photoresponse and Electroluminescence of Exfoliated Ga₂O₃ Flake on p-type GaN

      Researchers from the Dankook University have published a dissertation titled "Ultraviolet Photoresponse and Electroluminescence of Exfoliated Ga₂O₃ Flake on p-type GaN" in ECS Journal of Solid State Science and Technology.

Abstract

      β-phase Ga₂O₃ (β-Ga₂O₃) is a promising candidate for deep ultraviolet (UV) solar-blind photodetector due to its large bandgap of 4.9 eV. A high crystal quality two-dimensional β-Ga₂O₃ flake on p-type GaN (p-GaN) surface was formed using a facile mechanical exfoliation and transfer method, and the heterojunction photodiode consisting of an n-type β-Ga₂O₃ flake on a p-type GaN substrate was fabricated. The device exhibited a distinctive rectifying current-voltage (I-V) characteristics with a rectification ratio of 4.0×105 at ±2 V. The photodetector responded to both 365 nm and 254 nm UV light irradiation with a photocurrent to dark current ratio of 5.64×10⁵% for 365 nm and 3.38×10⁵% for 254 nm UV. The rise and decay time constants for 365 nm and 254 nm deep UV exposure were obtained through dynamic time-dependent photocurrent measurements. In addition, electroluminescence of the p-type GaN/n-type Ga₂O₃ heterojunction diode was observed under high forward bias condition.

DOI：

https://doi.org/10.1149/2162-8777/adb20e