【Epitaxy Papers】Effect of helium ion beam irradiation on the physical properties of Si-doped Ga₂O₃ epitaxial thin films

      Researchers from the Pusan National University have published a dissertation titled "Effect of helium ion beam irradiation on the physical properties of Si-doped Ga₂O₃ epitaxial thin films" in Journal of the Korean Physical Society.

Abstract

      Here, we studied the effect of the helium ion beam irradiation on the structural and transport properties of Si-doped β-Ga₂O₃ (Si:Ga₂O₃) epitaxial thin films. Epitaxial Si:Ga₂O₃ thin films were grown on (0001) Al₂O₃ substrates by pulsed laser deposition. Despite different Si concentrations, the films remain (−201) epitaxially oriented with respect to (0001) Al₂O₃. Furthermore, Helium ion beam irradiation was used to mimic massive cosmic ray (e.g., α-particle) irradiation on the structural and electronic modification. As a result, it is observed that the structural and transport properties of epitaxial Si:Ga₂O₃ thin films were degraded owing to the He ion irradiation.

DOI：

https://doi.org/10.1007/s40042-025-01326-5