【Device Papers】Design of high-frequency Ga₂O₃ Schottky barrier diodes for microwave wireless power transmission

      Researchers from the Osaka Metropolitan University have published a dissertation titled "Design of high-frequency Ga₂O₃ Schottky barrier diodes for microwave wireless power transmission" in Japanese Journal of Applied Physics.

Abstract

      Ga₂O₃ Schottky barrier diodes (SBDs) are expected to be applied to rectenna circuits used for microwave wireless power transmission due to its superior physical properties. We first designed high-frequency Ga₂O₃ SBD structures to maximize a cutoff frequency using a device simulator. Then, the simulated device characteristics obtained for the optimized Ga₂O₃ SBDs were transferred to a circuit simulator to calculate power conversion efficiencies (η) of rectenna circuits operating at 24 GHz. In case of the SBDs having an n⁺-Ga₂O₃ access layer with an extremely large electron density of 4 × 10²⁰ cm^-3, the maximum η was estimated to be as high as about 80% irrespective of the anode area. These results suggest that Ga₂O₃ SBDs have high potential for rectenna circuit applications, especially for frequencies above 10 GHz.

DOI：

https://doi.org/10.35848/1347-4065/adbeab