【Others Papers】Epitaxial growth and band energy alignment of Ga₂O₃ films on diamond (001) single crystal substrate

      Researchers from the Xiamen University have published a dissertation titled "Epitaxial growth and band energy alignment of Ga₂O₃ films on diamond (001) single crystal substrate" in Journal of Alloys and Compounds.

Abstract

      Semiconductors such as Ga₂O₃ and diamond with ultra-wide bandgaps are receiving considerable interest for applications in high power electronic devices and radiation detectors due to their exceptionally wide bandgaps and robust electric field tolerance. To broaden its applications, creating a p-n junction is essential. In this paper, we report a detailed investigation on the heteroepitaxial growth and the interfacial properties band of β-phase Ga₂O₃ films on diamond (001) single crystal substrate. We present the successful epitaxy of high crystalline quality β-Ga₂O₃ (-201) layer on diamond (001) single crystal, with in-plane epitaxial relationship of β-Ga₂O₃ [1-10]||diamond [110] and β-Ga₂O₃ [132]||diamond [110]. High-resolution X-ray photoemission spectroscopy (XPS) study reveals that the valence and conduction band offsets are 1.41 eV and 2.03 eV, respectively, and confirms a “type-II” band alignment at the interface. There is a significant downward built-in potential of 1.32 eV was observed close to the diamond interfacial region. This band structure of the hetero-interface facilitates the efficient separation and migration of charge carriers, making this heterojunction particularly valuable for power electronics and detectors.

DOI：

https://doi.org/10.1016/j.jallcom.2025.179558