【Member News】Hangzhou Fujia Gallium's "One Click Crystal Growth" Equipment Passes Customer On site Acceptance, Industrialization of Gallium Oxide Welcomes New Breakthrough

      Recently, the Gallium Oxide EFG method equipment independently developed by Hangzhou Fujia Gallium Industry Technology Co., Ltd. has completed on-site acceptance and been successfully rolled off the production line. This equipment with the "one-click crystal growth" function realizes intelligent control of crystal growth, marking a major breakthrough in the Gallium Oxide single crystal preparation technology and laying a solid foundation for the large-scale production of high-performance semiconductor materials.

      Gallium Oxide (Ga₂O₃), as a highly promising core material for power devices, has long been constrained by problems such as high-temperature volatilization and decomposition, anisotropy, and thermal field asymmetry, resulting in a slow industrialization process. Fujia Gallium adheres to a "dual-wheel drive" strategy of process and equipment. By optimizing the core links of the EFG growth process, deeply embedding the related technologies of crystal growth habits into the equipment, and integrating machine learning technology, it has successfully achieved an "unmanned" mode for the growth of Gallium Oxide single crystal. This technology effectively reduces the reliance on manual experience, significantly enhancing the efficiency and quality of crystal production. It was evaluated and certified by industry experts in December 2024.

      The successful on-site acceptance of the customer this time not only verified the reliability of the equipment technology, but also marked that the "one-click crystal growth" technology has gained market recognition. Fujia Gallium will take the official launch of its equipment as a new starting point, continuously promote the collaborative innovation of processes and equipment, accelerate the industrialization pace of Gallium Oxide materials, and support China achieve new breakthroughs in the field of high-performance semiconductors.

About Hangzhou Fujia:

      Hangzhou Fujia Gallium Technology Co., LTD., founded on December 31, 2019, is the first "hard technology" enterprise registered by Hangzhou Institute of Optics and Fine Mechanics. With the vision of "Making the World Use Good Materials", the company focuses on the industrialization work of wide bandgap semiconductor Gallium Oxide materials. The core products include Gallium Oxide single crystal substrates, MOCVD epitaxial wafers, MBE epitaxial wafers, Gallium Oxide crystal growth and processing equipment. The products mainly serve the fields of power devices, microwave and radio frequency, and optoelectronic detection.

      At present, the company has won a number of honors: In 2022, it won the Zhejiang Province Science and Technology Small and Medium-Sized Enterprise; National High-Tech Enterprise in 2023; In 2024, it will be awarded as Hangzhou Enterprise High-Tech Research and Development Center and Zhejiang Special Small and Medium-Sized Enterprise. Obtain ISO9001 quality system certification in 2025 (No. 20225Q20294R0M); It undertook one Gallium Oxide project for the National Development and Reform Commission and participated in three national and provincial projects from the Ministry of Science and Technology, Zhejiang Province, and Shanghai. In addition, it has obtained 12 international patents authorized (6 in the United States and 6 in Japan), 40 domestic patents authorized, 3 trademark certification and registration of "Fujia Gallium", and 4 software copyrights (crystal growth control software of "one-click crystal growth").