【Member News】GAREN SEMI Leads Review Meetings for Draft Group Standards:"Testing Method for Dislocation Density of Gallium Oxide Single Crystal" and "β-Phase Gallium Oxide Homoepitaxial Wafer"

      To promote the standardization and industrialization of Gallium Oxide semiconductor materials, Hangzhou GAREN SEMI Co., LTD. (hereinafter referred to as GAREN SEMI) will participate in the review meeting of the draft of two group standards, namely " Testing Method for Dislocation Density of Gallium Oxide Single Crystal" and "β-Phase Gallium Oxide Homoepitaxial Wafer", as the leading drafting unit.

      The review meeting, hosted by the China Electronic Materials Industry Association and co-organized by the Semiconductor Materials Industry Association of China Electronic Materials Industry Association and Zhejiang HuaSheng Mold Technology Co., Ltd., will be held in Quzhou on June 12-13, 2025. Industry experts, representatives of enterprises in the industrial chain and research institutions will be gathered to review the technical specifications and application value of the draft standard.

Gallium Oxide: The "Potential Star" of Next-Generation Semiconductors

      Gallium Oxide is a ultra-wide band gap semiconductor material with a higher Bandgap and breakdown electric field strength. Its advantages include:

      1.Higher working voltage and power: The Bandgap of Gallium Oxide single crystal is approximately 4.8eV, and the breakdown electric field strength is about 8MV/cm. The breakdown electric field strength of Gallium Oxide is much greater than that of materials such as Si(1.1eV, 0.3MV/cm), SiC(3.3eV, 2.5MV/cm), and GaN(3.4eV, 3.3MV/cm), and the power devices fabricated from them have higher working voltages and power.

      2.Lower energy loss: The Baliga’s Figure of Merit of Gallium Oxide is approximately 10 times that of SiC and 4 times that of GaN. Devices developed using Gallium Oxide will have smaller on-resistance and higher power conversion efficiency.

      3.Simultaneously meeting high frequency and high power requirements: Gallium Oxide has a large Johnson's Figure of Merit (2844), which gives it more advantages than SiC and GaN. It simultaneously meets the requirements of high frequency and high power, and has broad prospects in the RF field.

      4.Excellent ultraviolet photoelectric performance: The ultraviolet cut-off edge of Gallium Oxide single crystal is short (260nm), and the transmittance in the ultraviolet band is less affected by carrier concentration, which has obvious advantages in the preparation of deep ultraviolet photoelectric devices.

      5.Strong thermal and chemical stability: Due to the excellent physical properties of Gallium Oxide, Gallium Oxide has obvious advantages in the manufacture of high-voltage power devices, radio frequency devices, deep ultraviolet optoelectronic components, etc.

Review Meeting for the Draft of the Gallium Oxide Group Standard: A Crucial Step in Promoting Industry Standardization

      Group standards are technical specifications formulated under the leadership of industry associations, industrial alliance and other organizations, aiming to fill the gaps in national or industry standards and respond quickly to the technical demands of emerging fields. The draft review meeting, as a core part of standard development, organizes experts to rigorously verify the scientific nature, operability and industrial applicability of the standard content to ensure that it can provide effective guidance for the development of the industry.

      At present, there is a lack of unified norms and standards for the production, testing and application of Gallium Oxide materials. This not only affects the consistency and reliability of product quality, but also restricts the large-scale development of the industry. GAREN SEMI has been continuously promoting the standardization development of the domestic Gallium Oxide industry. Previously, in January 2025, it led the review meeting for the establishment of a Gallium Oxide group standard. At this meeting, GAREN SEMI led the formulation of two standards related to Gallium Oxide, which will address the lack of standardization in the material preparation and testing processes, laying a foundation for the research and development of downstream devices and large-scale applications.

GAREN SEMI: An Innovation Leader in the Gallium Oxide Field

      GAREN SEMI was established in September 2022. It is a technology enterprise specializing in the research and development, production and sales of wide band gap semiconductor materials and equipment such as Gallium Oxide.

      GAREN SEMI leads industry innovation by adopting its independently developed new casting method for single crystal growth technology. It was the world's first to launch an 8-inch Gallium Oxide single crystal substrate, setting an industry record of upgrading one size each year from 2 inches to 8 inches. And has developed the first domestic VB crystal growth equipment dedicated to Gallium Oxide including a process package and are now fully available for sale. In collaboration with the research team from Zhejiang University, has been deeply engaged in the field of Gallium Oxide research and have achieved breakthroughs in key technologies in areas such as the growth, detection, and quality assessment of Gallium Oxide single crystal. Gallium Oxide Semiconductor is committed to addressing major national demands. It has mastered core technologies covering the entire chain of Gallium Oxide growth, processing, and epitaxy, and has obtained 14 domestic and international invention patents. It is deeply engaged in continuous innovation in the upstream industrial chain of Gallium Oxide.

      The company's products include Gallium Oxide substrates of different sizes, crystal orientations and resistivity, as well as customizable Gallium Oxide seed crystals, etc. The products are mainly used in power electronic devices for the state grid, new energy vehicles, rail transit, 5G communication and other fields. After years of research and development, the company has mastered the core technologies of the entire chain, including equipment development, thermal field design, crystal growth, and crystal processing, and is capable of providing Gallium Oxide substrates with completely independent intellectual property rights. GAREN SEMI is committed to addressing major national demands. It will focus on continuous innovation in the upstream industrial chain of Gallium Oxide and strive to provide product support for the development of China's power electronics and other industries.

      GAREN SEMI is continuously promoting the development of the Gallium Oxide industry on a global scale. It has signed a global strategic cooperation agreement with NextGO.Epi, a leading German Gallium Oxide epitaxial enterprise, to jointly drive breakthroughs in the application of Gallium Oxide in new energy, power electronics and other fields, injecting new impetus into the global semiconductor industry.

For more information about GAREN SEMI and its products

Please visit our official website: http://garen.cc/

Or contact us by:

Mr. Jiang :15918719807

Email :jiangjiwei@garen.cc

Mr. Xia :19011278792

Email:xianing@garen.cc