【Member Intro】Qingdao Huaxin CrysElec Technology Co.,Ltd —— Regular Member

Company Profile

      Qingdao Huaxin CrysElec Technology Co.,Ltd (hereinafter referred to as "Huaxin Jingdian"), founded in 2011, is headquartered in the High-tech Zone of Qingdao City. Since its establishment, the company has been dedicated to the research and development and production of compound semiconductors and is one of the first high-tech enterprises in China to carry out the research and development and production of compound semiconductors.

      The company mainly engages in the research and development and production of compound semiconductor substrate materials such as sapphire, Gallium Oxide, and Indium Phosphide. Its downstream terminal products cover multiple important industries including integrated circuits, new displays, artificial intelligence, and 5G communications. Some products have broken the foreign monopoly on high-end semiconductor substrate wafer and achieved domestic substitution.

      Adhering to the business philosophy of " Expertise, Integrity, Transparency & Efficiency", Huaxin Jingdian focused on the crystal growth and processing of semiconductor wafer substrates, a key basic material for integrated circuits, and operated well with continuous improvement in performance. The company has always adhered to the development of scientific and technological innovation, constantly making breakthroughs and innovations. It has successively undertaken 8 core technology research and development projects, including the Key Research and Development Program of Shandong Province (Major Scientific and Technological Innovation Project), the project for Enhancing the Innovation Capacity of Technology Small and Medium-Sized Enterprise in Shandong Province, and the project for Cultivating Science and technology parks in Qingdao City.

      They have undertaken the construction of 10 scientific research platforms, including the Shandong Provincial Enterprise Technology Center, the Shandong Provincial "One Enterprise, One Technology" R&D Center, the Qingdao High-Performance Gallium Oxide single crystal Substrate Scene Application Laboratory, the Qingdao Key Laboratory of Compound Semiconductor Substrate Materials, the Qingdao Semiconductor Compound Engineering Research Center, and the Qingdao Compound Semiconductor Expert Workstation. Won the second prize of the 7th "Maker China" Qingdao Division and the second prize of the 11th China Innovation and Entrepreneurship Competition Qingdao Division.

      It has been recognized as a national specialized, refined, distinctive and innovative "Little Giant" enterprise, a national green factory, a Shandong Province manufacturing single champion enterprise, a Shandong Province gazelle enterprise, a Shandong Province new materials leading enterprise, an artificial intelligence enterprise, etc. It has applied for more than 220 patents and passed seven management system certifications including the two-in-one integration management system and the national intellectual property management system. It has strongly promoted the healthy development of the upstream semiconductor industry chain in Qingdao and Shandong Province.

Huaxin Jingdian office scene

Achievements

      At present, the company has been recognized by the Municipal Bureau of Development and Reform of Shandong Province and established the Shandong Provincial Enterprise Technology Center; Approved by the Development and Reform Commission of Qingdao City, the Qingdao High-Performance Gallium Oxide single crystal Substrate Scene Laboratory and the Qingdao Semiconductor Compound Engineering Research Center have been established. With the approval of the Qingdao Science and Technology Administration, the Qingdao Key Laboratory of Compound Semiconductor Substrate Materials and other scientific research platforms have been established to conduct research and development on Gallium Oxide substrates. Gallium Oxide (Ga₂O₃) is a direct bandgap semiconductor material with a Bandgap of approximately 4.9eV. Due to its Bandgap being much larger than that of GaN and SiC, it is known as an ultra-wide band gap semiconductor material. It features outstanding properties such as high breakdown electric field, high thermal conductivity, high electron saturation rate, and strong radiation resistance. Its main application scenarios include electromagnetic railguns, shipborne electromagnetic catapulters, high withstand voltage power devices, Solar-blind ultraviolet detection, and other fields. It is more suitable for manufacturing high-temperature, high-frequency, radiation-resistant, and high-power electronic devices, and serves as the "core" of solid-state light sources, power electronics, and microwave radio frequency devices.

Gallium Oxide crystal