【Member Intro】School of Microelectronics, Wuhan Textile University—— Regular Member

I.Company Profile

      The college of Microelectronics of Wuhan Textile University is a "new engineering" characteristic college established by the university in response to the rapid development trend of the new generation of electronic information technology and to serve the strategic needs of the national integrated circuit and chip industry development. It is based on the majors of Microelectronics Science and Engineering and Optoelectronic Information Science and Engineering. The college currently has 4 departments and teaching centers. It has an academic master's degree authorization point in the first-level discipline of Electronic Science and Technology and a professional master's degree authorization point in Electronic Information. It offers two undergraduate programs: Optoelectronic Information Science and Engineering and Microelectronics Science and Engineering.

      The college boasts a high-quality teaching staff led by national-level talents and supported by middle-aged and young backbone members. Among them, there are 4 national-level talents, more than 10 provincial and ministerial-level talents, and 4 of the world's top 2% scientists and highly cited Chinese researchers. A number of faculty members have received honors and awards such as the May 4th Youth Medal of Hubei Province and the First prize of the National College Teachers' Teaching Innovation Competition. Nearly 95 percent of the full-time teachers have doctoral degrees, nearly 50 percent have overseas study backgrounds, and nearly 60 percent have senior professional titles. The teachers of the college have presided over 6 projects under the National Key Research and Development Program and over 40 projects funded by the National Natural Science Foundation of China, with a total research budget exceeding 100 million yuan.

      The college follows the educational philosophy of high starting point, high standards and high quality, aiming to cultivates high-quality, compound and innovative talents for the integrated circuit and chip-related industries. The college possesses multiple teaching and research platforms, including the Hubei Provincial University Physics Experiment Teaching Demonstration Center, the Hubei Provincial Engineering Research Center for Wide Band Gap Semiconductor Materials and Devices, and the Hubei Provincial Research Association for Solitons (HPRAS) Nonlinear Optics Research Center. The college vigorously promotes extracurricular scientific and technological innovation activities for college students, focusing on cultivating students' scientific literacy, innovative thinking, and practical problem-solving skills. Students have achieved remarkable results in national competitions such as the "Challenge Cup," the China International College Students Innovation Competition, and the National College Students Physics Experiment Competition, winning more than 10 national first prizes (gold awards) and over 100 national and provincial-level awards.

      In the field of wide band gap semiconductor research, the college has carried out systematic and in-depth studies on high-quality Ga₂O₃ epitaxial thin films and single crystal growth technology, bipolar doping and surface defect control of Ga₂O₃, as well as the development of high-performance solar-blind ultraviolet photodetectors, and has achieved a series of significant breakthroughs. Published in ACS Photonics, ACS Appl. Mater. Interfaces, AppL. Phys. Lett. More than 10 SCI papers have been published in international authoritative journals, and 2 US patents and over 10 Chinese patents have been authorized. This has strongly advanced the development of ultra-wide band gap semiconductor materials and devices in China, and provided important technical support for the practical application of Ga₂O₃ materials in deep ultraviolet light detection and high-power electronic devices.

II.Achievements

      The Ultra-Wide Band Gap Semiconductor and Optoelectronic devices team of the college (led by Professor He Yunbin) has carried out innovative research in Ga₂O₃ single crystal and epitaxial thin film growth, Ga₂O₃ bipolar doping and surface defect control, as well as high-performance Solar-blind ultraviolet photodetectors, achieving a series of significant research.

      Research Achievement I: High-Quality Ga₂O₃ Epitaxial Thin Films and Single Crystal Growth Technology

      The Pulsed Laser Deposition (PLD) Epitaxial Technology was developed, achieving the heterogeneous epitaxial growth of high-quality Ga₂O₃ films on C-plane (and C-plane chamfer) sapphire and magnesium oxide substrates. The half-peak width of the crystal face XRD rocking curves of Ga₂O₃ films (600) grown on MgO(100) substrates was as low as 0.075°. In addition, the sub-oxide vapor phase epitaxy (SOVPE) technique was developed to enable the rapid and controllable preparation of high-quality Ga₂O₃ single-crystal thick films. On C-plane chamfered sapphire substrates, Ga₂O₃ (-620) thick films were successfully grown, achieving an XRD rocking curve FWHM as low as 0.082° and a surface roughness as low as 0.312 nm.

      Research Achievement II: Study on Surface Defect of Gallium Oxide Single Crystal

      A novel two-dimensional Ga₂O₃ film was fabricated on the Au(111) surface and eventually a stable Ga₂O₃ film was obtained. The transition from metastable Ga₂O₃ to stable Ga₂O₃ was experimentally observed, and the band bending characteristics of Ga₂O₃ at the α-Ga₂O₃(0001)/Au(111) Schottky junction interface was obtained. The defect of oxygen vacancies (Vo) on the surface of a single crystal β-Ga₂O₃(100) was observed at the atomic level for the first time using a scanning tunneling microscope (STM), and the dissociation and adsorption model of H₂O molecules at Vo was elucidated.

      Research Achievement III: Development of High-Performance Gallium Oxide Solar-Blind Ultraviolet Photodetectors

      A highly sensitive and fast-response fully Solar-blind ultraviolet detector based on Ga₂O₃ alloy doped with IIIB group transition metal elements has been developed. Through the design and optimization of device structure and electrodes, a single-point deep ultraviolet light detection technology was developed based on high-quality epitaxial Ga₂O₃ thin films, achieving complete solar-blind spot detection (peak wavelength 250 nm, cut-off wavelength 275 nm) The device reached the world-leading level in deep ultraviolet photodetector devices in terms of two core technical indicators: extremely low dark current (< 0.2 pA) and extremely fast response speed (< 10 ms). We were the first to develop a new type of high-performance ferroelectric-Gao coupling enhanced single-junction/multi-junction self-driven solar-blind ultraviolet photodetector. Among them, the performance of the n-ZnO/n-Ga₂O₃/p-GaN dual-junction device shows significant advantages. Responsivity R_{260 nm} = 178.24 mA/W, external quantum efficiency EQE = 85%, detection rate D*_{260 nm} = 1.25×10¹³ Jones,  rise/return response time τ_r/τ_d =0.23/0.34 s [ACS Photonics_d 11 (2024) 1293].

III.Photo of the Member's Plaque