【Epitaxy Papers】Achieving Nanocrystalline Si-Doped Ga₂O₃ Thin Films using Low-Temperature Si Induced Recrystallization Effect for Solar Blind Ultraviolet Detection Applications

      Researchers from the Sun Yat-sen University have published a dissertation titled "Achieving Nanocrystalline Si-Doped Ga₂O₃ Thin Films using Low-Temperature Si Induced Recrystallization Effect for Solar Blind Ultraviolet Detection Applications" in Journal of Alloys and Compounds.

Abstract

      Ga₂O₃ thin films have attracted much attention in commercial and military solar blind ultraviolet detector applications owing to the suitable bandgap and excellent radiation hardness. However, the crystalline quality of large area Ga₂O₃ thin films is hard to control, limiting their detection performances. Herein, large area Si-doped Ga₂O₃ thin film was prepared, exhibiting a high crystalline quality with a low oxygen vacancy concentration owing to the Si induced recrystallization mechanism under a low annealing temperature (500 ℃). Solar blind ultraviolet detectors formed by the Si-doped Ga₂O₃ thin film were successfully fabricated, achieving a low dark current (8.6 × 10⁻¹⁴ A), a high photo-dark current ratio (3.6 × 10⁸), a high responsivity (5.4 A/W), a high detectivity (7.3 × 10¹⁴ Jones), a high responsivity rejection ratio (R_254 nm/R_400 nm: 2.1 × 10⁹) and a fast response speed (falling time: ∼99 ms). This work is significant for the preparation of nanocrystalline Ga₂O₃ thin film and their solar blind ultraviolet detection applications.

DOI：

https://doi.org/10.1016/j.jallcom.2025.182823