【Device Papers】A Review: β-Ga₂O₃ Transistors With Back-Barrier for RF Applications

      Researchers from the NICT have published a dissertation titled "A Review: β-Ga₂O₃ Transistors With Back-Barrier for RF Applications" in ECTI-CON 2025.

Abstract

      This paper reviews the recent progress in β-Ga₂O₃ radio frequency (RF) metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating an (Al_xGa_1-x)₂O₃ back-barrier. The back-barrier structure offers several advantages, including enhanced carrier confinement and improved gate controllability, leading to the reduction of short-channel effects (SCEs), and effective suppression of drain current leakage. The review covers various aspects of back-barrier-based β-Ga₂O₃ RF MOSFETs, specifically focusing on material properties, device fabrication, DC characteristics, and RF characteristics. The impact of the back-barrier on device performance is systematically analyzed, highlighting its effectiveness in mitigating SCEs and improving RF characteristics. Additionally, the paper discusses the remaining challenges and future prospects for further enhancing the performance of these devices, particularly through the reduction of extrinsic delay and improvement of intrinsic transconductance.

DOI:

10.1109/ECTI-CON64996.2025.11100952