【Device Papers】Exploring progress in β-(AlₓGa₁₋ₓ)₂O₃/Ga₂O₃ heterojunction technology: A critical analysis of emerging power electronics and high-frequency applications

      Researchers from the SRM Institute of Science and Technology have published a dissertation titled "Exploring progress in β-(Al_xGa_1-x)₂O₃/β-Ga₂O₃ heterojunction technology: A critical analysis of emerging power electronics and high-frequency applications" in Micro and Nanostructures.

Abstract

      The ongoing development of β-(Al_xGa_1-x)₂O₃/β-Ga₂O₃ heterojunction systems demonstrates significant potential for advanced power management and radio frequency applications. These compounds benefit from gallium oxide’s remarkably wide energy bandgap and substantial electric field tolerance, while simultaneously overcoming traditional constraints through strategic interface design. The engineered boundaries between materials facilitate enhanced electron mobility through quantum confinement effects, creating pathways for improved performance. Simultaneously, the deliberate manipulation of electronic band structures allows researchers to customize operational parameters with unprecedented precision, opening new possibilities for specialized electronic components. This review examines fundamental properties, epitaxial growth challenges, device architectures, and performance metrics, highlighting breakthroughs including breakdown fields approaching 5.5 MV/cm, breakdown voltages exceeding 7 kV, and RF cutoff frequencies reaching 32 GHz. Thermal management solutions like AlN capping layers have demonstrated temperature reductions up to 40 %, addressing a key limitation of these materials. The review also analyzes dynamic performance considerations and explores future research directions, including novel device concepts, hybrid material integration, and commercialization pathways that are essential for realizing the full potential of these promising heterojunction technologies.

DOI：https://doi.org/10.1016/j.micrna.2025.208289