【Epitaxy Papers】Structural Properties and Raman Spectra of Micron-Thick β-Ga₂O₃ Films Deposited on SiC/Porous Si/Si Substrates

      Researchers from the Dmytro Motornyi Tavria State Agrotechnological University have published a dissertation titled "tructural Properties and Raman Spectra of Micron-Thick b-Ga₂O₃ Films Deposited on SiC/Porous Si/Si Substrates" in ECS Journal of Solid State Science and Technology.

Abstract

      The possibility of expanding the element base of optoelectronics and power electronics by using β-Ga₂O₃ motivates the search for efficient methods for growing its high-quality films. Here, β-Ga₂O₃ films with thicknesses of 1.15 and 2.25 μm were deposited on SiC/porous Si/Si substrates using high-frequency magnetron sputtering and characterized by scanning electron microscopy, X-ray diffraction (XRD), and micro-Raman spectroscopy techniques. The films were composed of β-Ga₂O₃ crystallites with an average size of 62 and 109 nm, preferentially oriented along [100] direction. The relative increase of their lattice parameters with respect to single crystal ones was no more than 1.5×10^–3 for the c parameter. The small strain values of about 1×10^–3 calculated from the XRD patterns were verified by the absence of any significant changes in phonon modes’ parameters in the β-Ga₂O₃ film Raman spectra.

DOI：

https://doi.org/10.1149/2162-8777/adfb52