【Device Papers】SiH₄ plasma-induced interfacial modifications between Ti and Fe-doped β-Ga₂O₃ for development of new-generation x-ray detectors

      Researchers from the University at Albany, State University of New York have published a dissertation titled "SiH₄ plasma-induced interfacial modifications between Ti and Fe-doped β-Ga₂O₃ for development of new-generation x-ray detectors" in MRS Communications.

Abstract

      Fe-doped semi-insulating β-Ga₂O₃ is a promising platform for development of advanced x-ray detectors. Optimizing their performance requires good understanding of the metal/Ga₂O₃ interfacial and electronic properties between metal and Fe-doped β-Ga₂O₃. This study explores SiH₄ plasma effects on chemical stoichiometry, oxygen vacancy concentration and band bending for Ti thin films on Fe-doped β-Ga₂O₃ with x-ray photoelectron spectroscopy. The plasma treatment leads to enhanced surface oxygen vacancies, accompanied by an elevated surface Fermi level and the formation of an interfacial layer structure different from the case without plasma processing. The SiH₄ plasma effects are discussed in relation to surface defect modifications.

DOI：

https://doi.org/10.1557/s43579-025-00795-w