【Others Papers】Weak Selective Growth of Ga₂O₃ Nanowires in Hydrothermal Synthesis

      Researchers from the Beijing University Of Technology have published a dissertation titled "Weak Selective Growth of Ga₂O₃ Nanowires in Hydrothermal Synthesis" in Acta Electronica Sinica.

Abstract 

      Ultra-broadband semiconductor gallium oxide (ZnO) nanowires have attracted much attention in the scientific community in recent years as a nanomaterial with unique properties. As a third-generation metal-oxide semiconductor, ZnO, the growth of ZnO nanowires is substrate-selective, and highly uniform arrays can be achieved on substrates homogeneous to it, but they are not easy to grow on heterogeneous substrates, thus enabling the patterning of self-organized micro- and nanostructures; however, for a new metal-oxide semiconductor, Ga₂O₃, the growth of Ga₂O₃ nanowires is not substrate-selective. The arrays realized on homogeneous substrates are neither homogeneous nor dense and can be grown on a variety of substrates. In this paper, we comprehensively and systematically explored the factors affecting the morphology of Ga₂O₃ nanowires through several sets of comparative experiments on the growth of nanowires by hydrothermal method, investigated the relationship between the factors by using the control variable method, found that the selective growth of Ga₂O₃ nanowires is weakened because lattice matching is no longer the only important factor determining the growth of the nanowires, and proposed the heterogeneous nucleation, which took the grain size and roughness of the seed layer as the core factors, and found that they were not as important as those in the growth of the nanowires. roughness as core factors, and found that they are another decisive factor affecting the morphology and density of nanowire growth, and both of them play a key role in the Ga₂O₃ nanowire growth process at the same time. This conclusion is of great significance in guidingthe in-depth understanding of the growth mechanism of Ga₂O₃ nanowires and the preparation of self-organized device structures.

DOI：

https://doi.org/10.12263/DZXB.20241047