【Device Papers】Investigation of Maximum Gain Amplifier using a Split Stacked Recessed Gate design on β-Ga₂O₃ MOSFET for S - band Applications

      Researchers from the University of Delhi have published a dissertation titled "Investigation of Maximum Gain Amplifier using a Split Stacked Recessed Gate design on β-Ga₂O₃ MOSFET for S - band Applications" in Semiconductor Science and Technology.

Abstract

      In the present work, a maximum gain amplifier has been designed at 3 GHz using the proposed device i.e., split-stacked recessed gated β – Ga2O3 MOSFET. Extensive simulations have been performed on TCAD Silvaco to investigate the analog and RF metrics of the proposed device. It has been demonstrated that the proposed device exhibits 8x times higher cut-off frequency along with 6x times higher gain bandwidth product and 3x times higher transconductance frequency product as compared to conventional device. Further, the parasitic capacitances, scattering parameters, maximum current and power gains have also been extracted and a maximum gain amplifier is designed. It has been demonstrated that the amplifier exhibits the gain value of 14.02 dB at 3 GHz.

DOI：

https://doi.org/10.1088/1361-6641/adfe10