【Device Papers】Analysis of the Temperature Dependence of the Capacitance of NiO/Ga₂O₃ Heterojunction Diodes Using Analytical and PSO Modelling

      Researchers from the University of Biskra have published a dissertation titled "Analysis of the Temperature Dependence of the Capacitance of NiO/Ga₂O₃ Heterojunction Diodes Using Analytical and PSO Modelling" in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields.

Abstract

      NiO/Ga₂O₃ heterojunctions are of significant interest due to their potential applications in power electronics and optoelectronics. Accurate extraction of capacitance-voltage (C-V) parameters is crucial for understanding their electrical characteristics and fundamental physical phenomena involved. In this context, this work investigates the temperature-dependent C-V characteristics of NiO/Ga₂O₃ heterojunction diodes (HJDs) before and after thermal annealing. The voltage barrier (V_B) and the effective doping density (N_eff) are extracted from these characteristics using the familiar analytical modeling (CAM) as well as an artificial intelligence (AI) based on particle swarm optimization (PSO) algorithm. N_eff showed a decrease with increasing temperature, which is unusual behavior and is related to deep defects in Ga₂O₃. Traps revealed by deep-level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS) measurements were exploited to perform simulation using SCAPS. First, an ideal NiO/Ga₂O₃ HJD is considered, and then the defects of the fresh and annealed samples are considered. The results confirmed the influence of traps and exhibited consistent behavior with the observed pattern. The band diagram evolution with temperature has provided further insight into this phenomenon. Furthermore, PSO results were compared with those of CAM and demonstrated that the PSO algorithm offers superior accuracy in parameter extraction, as evidenced by lower root mean square error (RMSE) values, reaching a minimum of 4.65 × 10⁻¹³. This approach provides a better method for evaluating the extracted parameters from the C-V characteristics of Ga₂O₃-based heterojunction devices.

DOI：

https://doi.org/10.1002/jnm.70103