【Device Papers】High power operating neuromorphic transistor based on F-doped β-Ga₂O₃ channel on Si wafers

      Researchers from the Ajou University have published a dissertation titled "High power operating neuromorphic transistor based on F-doped β-Ga₂O₃ channel on Si wafers" in Journal of Alloys and Compounds.

Abstract

      The advancement of ultrathin metal oxide thin-film transistors (TFTs) has opened new avenues in high-performance electronics, particularly for applications beyond conventional large-area electronics. Herein, we report the fabrication of a 10 nm-thick F-doped β-Ga₂O₃ channel for TFTs on the Si wafers, showing their potential for high-power electronics and neuromorphic computing. The n-type field-effect transistors (FETs) have exhibited an exceptional on-off ratio of ∼10⁵, a subthreshold swing (SS) as low as 90 mV dec⁻¹, and an electron mobility 0.23 cm² V⁻¹ s⁻¹. The device demonstrated stable operation with a threshold voltage (V_th) of 15.5 V, indicating their robustness under varying electrical conditions. X-ray photoelectron spectroscopy (XPS), kelvin probe force microscopy (KPFM), and DFT analyses confirmed fluorine incorporation, leading to a significant reduction in oxygen vacancies and enhanced conductivity. Additionally, the TFTs exhibited synaptic behaviors such as paired-pulse facilitation (PPF), long-term potentiation (LTP), and long-term depression, making them promising candidates for neuromorphic systems. This work highlights the potential for F-β-Ga₂O₃ as a versatile material for next-generation multifunctional devices, bridging the gap between high-performance power electronics and energy-efficient, brain-inspired computing, paving the way for innovations in artificial intelligence hardware.

DOI：

https://doi.org/10.1016/j.jallcom.2025.183267