【Epitaxy Papers】Safe and cost-effective mist CVD as a homoepitaxial growth technology to fabricate β-Ga₂O₃ RF MESFETs

      Researchers from the Kyoto University have published a dissertation titled "Safe and cost-effective mist CVD as a homoepitaxial growth technology to fabricate β-Ga₂O₃ RF MESFETs" in Japanese Journal of Applied Physics.

Abstract

      Attempts were made to use mist CVD for the fabrication of β-Ga₂O₃ RF MESFETs. For a device with a gate length and width of L_G =0.45 μm and W_G = 150 μm, respectively, the current gain cut-off frequency (f_T) and the maximum oscillation frequency (f_max) were 8.3 GHz and 18.4 GHz, respectively, and the electron velocity was calculated to be 2.3×10⁶ cm/s. These values are comparable to those of other reported devices, suggesting the potential of mist CVD as a safe and cost-effective growth technology for RF devices.

DOI：

https://doi.org/10.35848/1347-4065/ae0907