【Member News】Groundbreaking Release: Fujia Gallium Launches New (011) β-Ga₂O₃ Substrate Product

      Today, Fujia Gallium officially launched its new (011) crystal face Gallium Oxide substrate products, covering both small wafers and 2-inch standard specifications. It also fully opened up customization services for 4-inch substrates and 2-4-inch epitaxial wafer, enriching the company's Gallium Oxide substrate and epitaxial product system, and providing key material solutions for high-end applications such as high-voltage power devices. In line with the corporate vision of "making the world use the best materials".

Product Introduction

Equipment:

      The company has developed the world's first EFG equipment equipped with "one-click crystal growth", which can meet the growth requirements of 2-6-inch crystals. Currently, it has obtained 6 domestic authorized patents and 4 international authorized patents, and can provide equipment and supporting process packages.

      The company independently developed fully automatic VB crystal growth equipment and was the first in China to break through the technical bottleneck of 6-inch single crystal growth, achieving the preparation of large-sized VB single crystal. At present, 6 domestic patents and 4 international patents are granted, and VB equipment and process packages can be provided according to customer requirements.

      Taking into account the brittleness and easy cleavage characteristics of Gallium Oxide, the company has developed 2-6-inch Gallium Oxide single crystal substrate grinding and polishing equipment. According to customer needs, it can also provide mature grinding, polishing and cleaning process packages.

single crystal and epitaxial wafer:

      The company has established two enterprise standards and obtained ISO9001 quality system certification. It provides the market with 10mm to 6-inch Gallium Oxide single crystal substrates, 10mm to 6-inch MOCVD Gallium Oxide epitaxial wafer and 10×15mm MBE Gallium Oxide epitaxial wafer of various crystal directions.

About Hangzhou Fujia Gallium

      Hangzhou Fujia Gallium Technology Co., LTD., founded on December 31, 2019, is the first "hard technology" enterprise registered by Hangzhou Institute of Optics and Fine Mechanics. With the vision of "Making the World Use Good Materials", the company focuses on the industrialization work of wide bandgap semiconductor Gallium Oxide materials. The core products include Gallium Oxide single crystal substrates, MOCVD epitaxial wafers, MBE epitaxial wafers, The VB method and EFG method crystal growth equipment, substrate grinding and polishing equipment, etc. provide systematic solutions for material development, accelerate the full chain connection of the ultra-wide bandgap Gallium Oxide industry, and promote the application of Gallium Oxide materials in power devices, microwave and radio frequency devices, and optoelectronic detection fields.The company's series of important achievements in the development of Gallium Oxide have been featured and reported by well-known media such as People's Daily, Xinhuanet, China Securities News, and The Paper.

Corporate Honors:

      In 2022, it won the Zhejiang Province Science and Technology Small and Medium-Sized Enterprise; National High-Tech Enterprise in 2023; In 2024, it will be awarded as Hangzhou Enterprise High-Tech Research and Development Center and Zhejiang Special Small and Medium-Sized Enterprise. Obtain ISO9001 quality system certification in 2025 (No. 20225Q20294R0M) and 2024 Hangzhou “Rising Eagle” Enterprise. It undertook one Gallium Oxide project for the National Development and Reform Commission and participated in three national and provincial projects from the Ministry of Science and Technology, Zhejiang Province, and Shanghai. In addition, it has obtained 12 international patents authorized (6 in the United States and 6 in Japan), 40 domestic patents authorized, 3 trademark certification and registration of "Fujia Gallium", and 4 software copyrights (crystal growth control software of "one-click crystal growth").