【Member News】Garen Semiconductor Achieves a Breakthrough: First to Grow the Thickest 6-inch (010) β-Ga₂O₃ Crystal Using VB Method

      In October 2025, Hangzhou GAREN SEMI Co., Ltd. (hereinafter referred to as "GAREN SEMI") achieved another breakthrough in crystal growth technology. Using its independently developed crystal growth equipment dedicated to Gallium Oxide, the company successfully grew 6-inch (010) plane Gallium Oxide crystals via the Vertical Bridgman (VB) method, with the length of the uniform-diameter segment exceeding 40 mm. This accomplishment has reached an internationally leading level.

Figure 1. 6-inch (010) plane Gallium Oxide ingot grown by the VB method at GAREN SEMI (conductive type)

Figure 2 6-inch (010) -plane Gallium Oxide ingot in GAREN SEMI by VB method

Equal-diameter segment length

Advantages of Gallium Oxide Growth on the (010) Surface

      Among the commonly used crystal planes of Gallium Oxide single crystal substrates, the (010) surface exhibits outstanding physical properties and epitaxial performance:

      1.The (010) substrate has the highest thermal conductivity, which is beneficial for improving the performance of power devices.

      2.The (010) substrate offers a relatively fast epitaxial growth rate and good lattice matching, making it the preferred crystal plane for epitaxy.

      At present, GAREN SEMI has launched a range of wafer-level (010) Gallium Oxide single crystal substrate products. These products target the scientific research market, meeting the demand for (010) substrates in research applications and promoting collaborative cooperation among industry, academia, and research within the field.

      The VB method has significant advantages in the growth of Gallium Oxide single crystals and is becoming a new favorite in the industry. Domestic and international Gallium Oxide substrate manufacturers have already begun to make plans for its adoption.

Advantages of Growing Gallium Oxide Dingle Vrystals Using the VB Method

      Advantage 1: The VB method is suitable for growing Gallium Oxide single crystals with the axial direction parallel to the [010] crystal orientation, facilitating the production of large-sized (010) planar single crystal substrates.

      Advantage 2: The VB method does not require the use of precious metal iridium crucibles, eliminating concerns about crucible oxidation loss. Compared with conventional growth methods using iridium crucibles, this significantly reduces costs.

      Advantage 3: The VB method allows single crystal growth in an air atmosphere, effectively suppressing high-temperature decomposition of Gallium Oxide, reducing defects such as inclusions caused by crucible corrosion, and improving crystal quality.

      Advantage 4: The VB method features a small temperature gradient, resulting in fewer dislocations induced by thermal stress and consequently higher crystal quality.

      Advantage 5: Crystals grown by the VB method grow within the crucible, so the crystal diameter equals the crucible diameter. Therefore, there is no need to control the crystal diameter, the process is technically simple and stable, and it is easily automated.

The "Gallium" Speed of the GAREN VB Method

      In September 2024, GAREN SEMI launched its self-developed crystal growth equipment dedicated to Gallium Oxide. This equipment not only meets the high-temperature and high-oxygen conditions required for Gallium Oxide growth, but also enables fully automated crystal growth, minimizing manual intervention and significantly improving production efficiency and crystal quality.

Figure 3 VB method crystal growth equipment for Gallium Oxide in GAREN SEMI

      Based on its self-developed equipment, GAREN SEMI initiated the "Gallium" Speed in the following year:

      October 2024
      GAREN SEMI successfully grew 2-inch Gallium Oxide single crystals using the VB method, marking a first in China.

      January 2025
      GAREN SEMI successfully grew 4-inch Gallium Oxide single crystals using the VB method.

      October 2025
      GAREN SEMI successfully grew 6-inch Gallium Oxide single crystals using the VB method.

      In just one year, GAREN SEMI’s VB process has achieved a breakthrough from scratch to 6 inches. This milestone is not only the result of the unremitting efforts and diligent work of GAREN SEMI’s R&D team, but also a testament to the unique advantages of their self-developed Gallium Oxide-dedicated crystal growth equipment.

      By fully exploiting the capabilities of their proprietary equipment and optimizing process parameters in synergy, the team was able to achieve the leap from zero to 6 inches at “Gallium” speed, laying a solid material foundation for downstream device research and development, and is expected to accelerate the early large-scale application of China’s ultra-wide bandgap semiconductor industry.

For more information about GAREN SEMI and its products

Visit our official website: http://garen.cc/

Or contact us in the following ways:

Mr. Jiang :15918719807

Email :jiangjiwei@garen.cc

Mr. Xia :19011278792

Email :xianing@garen.cc