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【Member News】Shandong Jingsheng Wraps Up Successful Participation at Fifth Cross-Strait Gallium Oxide Conference

日期:2025-10-19阅读:58

      On October 12, the three-day 5th Cross-Strait Gallium Oxide and Related Materials and Devices Conference successfully concluded in Songshan Lake, Dongguan.

      As a national high-tech enterprise in the field of wide bandgap semiconductor equipment, Shandong Jingsheng Electronic Technology Co., Ltd. showcased its core equipment and technological achievements at the exhibition. The company joined experts, scholars, and industry peers from both sides of the Taiwan Strait to explore the industrialization path of Gallium Oxide, demonstrating its strong capabilities in independent innovation.

 

Booth Focus: Independently Developed Equipment Becomes a Highlight of the Event

      Booth No. 005 of Jingsheng Electronics drew continuous attention throughout the exhibition. The company showcased key equipment such as its Gallium Oxide Halide Vapor Phase Epitaxy (HVPE) system, Mist-CVD system, EFG crystal growth furnace, and VB crystal growth furnace. With completely independent intellectual property rights and distinctive technological advantages, these products attracted great interest and inquiries from representatives of research institutions and enterprises.

 

Brainstorming: Exploring Industrial Pain Points and Breakthrough Directions

      The R&D team of Shandong Jingsheng Electronics engaged in in-depth discussions with attendees on core topics such as “Materials and Devices for Gallium Oxide Power Applications.” To address current industry challenges, including low growth efficiency and limited yield of Gallium Oxide single crystals, the team shared a technological breakthrough with their EFG-method crystal growth furnace. Using precise temperature-field control technology, the growth cycle of 8-inch Gallium Oxide single crystals can be reduced by 20%, while the yield can be increased to over 75%.

      During discussions with institutions such as the Songshan Lake Materials Laboratory, both parties reached a consensus on “equipment-process co-optimization.” Policy support has provided strong momentum for the Gallium Oxide industry; in 2024 alone, the central government invested 360 million yuan in related R&D. “We need to accelerate the localization of equipment,” emphasized the company’s Chief Technology Officer during the exchange.

Industry Insights: Development Opportunities Driven by Both Policy and Market

      Industry data released during the exhibition show that the Chinese Gallium Oxide single-crystal market reached 120 million yuan in 2024, with the power semiconductor sector accounting for 58% of the demand. The rapid growth of new energy vehicles and smart grids has become a key driving force. Shandong Jingsheng Electronics showcased a series of equipment that precisely addresses the downstream industry's need for efficient and low-cost production.

      As a core enterprise in the Jinan Wide Bandgap Semiconductor Equipment Manufacturing Base, Jingsheng Electronics has established a complete layout from equipment R&D to process development. “Relying on our professional R&D team, we will continue to deepen our work on HVPE and EFG technologies, with plans to achieve mass production of 8-inch Gallium Oxide equipment by 2025,” said a company executive in an interview.

The Future is Promising: Empowering Industrial Upgrading through Equipment Innovation

      This exhibition not only highlighted Jingsheng Electronics' technological strength in Gallium Oxide equipment but also created a bridge for cross-regional cooperation. Looking ahead, the company will continue to embrace the principles of “Integrity, Innovation, Cooperation, and Win-Win”, actively participate in the collaborative innovation of the Gallium Oxide industry alliance, and support the policy goal of achieving a 70% domestic production rate for key processes by 2025.

      From the Spring City of Jinan to the lakeside of Songshan Lake, Jingsheng Electronics is using its independently developed equipment as a pen to write an innovative chapter for the Gallium Oxide industry. We look forward to more technological breakthroughs from this company, which has been deeply committed to the semiconductor field.