【Member News】The 12th Advanced Power Semiconductor Symposium to Be Held — Novel Crystal Technology to Deliver Invited Lecture

      The 12th Advanced Power Semiconductor Symposium, organized by the Advanced Power Semiconductor Division, will be held on November 19–20, 2025, at the Toyama International Conference Center (1-2 Otemachi, Toyama City, Toyama Prefecture, 930-0084, Japan). Experts and researchers from industry, academia, and research institutions will gather to discuss the latest developments in power semiconductor materials, devices, and applications.

      This year’s symposium features multiple technical sessions covering emerging power semiconductor materials such as silicon carbide (SiC), gallium nitride (GaN), and gallium oxide (Ga₂O₃). As a leading company in the research and development of gallium oxide power devices, Novel Crystal Technology, Inc. has been invited to deliver a special lecture, sharing its latest achievements and insights in this rapidly advancing field.

      The invited lecture will take place on Wednesday, November 19, from 14:00 to 14:30, in Session III: Invited Talks (GaN Applications and Oxide Devices), held in the Multi-Purpose Meeting Room. The presentation, titled “Progress in the Development of High-Voltage Gallium Oxide Power Devices,” will introduce recent advances in high-voltage Ga₂O₃ device development and discuss future prospects for practical applications. The talk is expected to provide valuable insights for researchers and engineers engaged in power electronics.

      As the demand for high-efficiency and energy-saving technologies continues to grow, gallium oxide power devices are drawing increasing attention as one of the most promising next-generation semiconductor materials. This symposium aims to further promote international technical exchange and foster innovation and industrial progress in the field of advanced power semiconductors.