【Device Papers】Thermally stable X-ray detector using β-Ga₂O₃ schottky barrier diodes in extreme environments

      Researchers from the Korea Aerospace University have published a dissertation titled " Thermally stable X-ray detector using β-Ga₂O₃ schottky barrier diodes in extreme environments" in Applied Materials Today.

Abstract

      We report the fabrication and high-temperature performance of β-Ga₂O₃-based X-ray detectors employing a Schottky barrier diode (SBD) structure. The fabricated devices consist of a Si-doped β-Ga₂O₃ epitaxial layer grown on a Sn-doped β-Ga₂O₃ substrate and are characterized under both dark and X-ray illuminated conditions across a temperature range from 303K to 573K. The detectors exhibit excellent thermal stability, maintaining a high photo-to-dark current ratio exceeding 100 even at 573K. Transient response analysis reveals consistent and rapid photocurrent dynamics, with sub-second response times maintained even at elevated temperatures up to 573 K. These findings highlight the potential of β-Ga₂O₃ SBDs as reliable, high-temperature X-ray detectors for use in extreme environments such as aerospace, nuclear energy, and industrial monitoring—without the need for active cooling systems.

DOI：

https://doi.org/10.1016/j.apmt.2025.102936