【Epitaxy Papers】Effects of high-temperature annealing on electrical properties of Si-doped β-Ga₂O₃ thin films grown by low-pressure hot-wall MOCVD

      Researchers from the Osaka Metropolitan University have published a dissertation titled "Effects of high-temperature annealing on electrical properties of Si-doped β-Ga₂O₃ thin films grown by low-pressure hot-wall MOCVD" in Applied Physics Letters.

Abstract

      Electrical properties of Si-doped Ga₂O₃ (010) homoepitaxial thin films grown by low-pressure hot-wall metalorganic chemical vapor deposition (MOCVD) and the effects of high-temperature post-deposition annealing (PDA) on them were studied through device characteristics of Schottky barrier diodes (SBDs) fabricated on the epitaxial substrates. All the SBDs showed ideal n-type Schottky characteristics with excellent in-plane uniformity at room temperature. Temperature-dependent forward current density–voltage (J–V–T) characteristics showed nearly constant ideality factors of 1.02 ± 0.01 from room temperature to 200 °C. The reverse breakdown V of the SBDs with PDA was about 100 V larger than those of the ones without PDA. Furthermore, reverse J–V–T characteristics of the PDA SBDs were well reproduced by the thermionic field emission model for the whole temperature range up to 200 °C. These results indicate that the high-temperature PDA treatment is a useful and effective technique to further improve electrical properties of the MOCVD-grown Ga₂O₃ epitaxial films.

DOI：

https://doi.org/10.1063/5.0292471