【Member News】Fujia Gallium Teams Up with NextGO Epi to Establish Global β-Ga₂O₃ Supply Chain

      China Hangzhou / Germany Berlin, 2025 — China’s leading β-Ga₂O₃ semiconductor company, Fujia Gallium Technology Co., Ltd., has officially signed a global strategic cooperation agreement with Germany’s epitaxial materials leader, NextGO Epi. The partnership will integrate crystal growth, epitaxy, and industrialization technologies to accelerate the large-scale application of β-Ga₂O₃ in renewable energy, power electronics, electric mobility, and high-efficiency industrial power systems, advancing the global power semiconductor industry.

      Fujia Gallium, founded in 2019 by Dr. Hongji Qi and others and incubated by the Hangzhou Institute of Optical Precision Machinery, is a full-chain innovator in China’s β-Ga₂O₃ industry. Guided by its vision “Let the world use better materials,” the company covers single-crystal substrates, MOCVD/MBE epitaxial wafers, and crystal growth equipment. It has mastered the full chain from crystal growth to wafer processing and epitaxy, and is advancing 6-inch β-Ga₂O₃ production lines, providing reliable materials for China and the global power electronics industries.

      NextGO Epi, established in 2025 by Dr. Ta-Shun Chou, Dr. Andreas Popp, and Dr. Andreas Fiedler, is a spin-off of Germany’s Leibniz Institute for Crystal Growth (IKZ). The company focuses on developing and manufacturing high-quality β-Ga₂O₃ epitaxial wafers for high-power and optoelectronic devices, aiming to become a global technology leader in epitaxial Ga₂O₃ materials.

      The collaboration will focus on optimizing material quality, scaling wafer sizes, validating process stability, and building a cross-border supply chain, while promoting Sino-European Ga₂O₃ industry exchange and technical collaboration. Both parties emphasize that with the growing demand for high-efficiency, high-voltage power devices, β-Ga₂O₃ is poised to become one of the most promising semiconductor materials in the next decade. The partnership will accelerate the industrialization of β-Ga₂O₃ and provide a reliable materials foundation for the global power electronics industry, supporting sustainable energy conversion and high-efficiency power systems.

Product Introduction

Gallium Oxide Equipment:

        The company has developed the world’s first “One-Click Crystal Growth” EFG (Edge-defined Film-fed Growth) system, capable of growing 2–6-inch crystals. Currently, it holds 6 domestic patents and 4 international patents and can provide the equipment along with a complete process package.

        The company independently developed a fully automatic VB (Bridgman) crystal growth system and was the first in China to overcome the technical bottleneck of 6-inch single crystal growth, achieving large-size VB single crystal preparation. It currently holds 6 domestic patents and 4 international patents, and VB equipment and process packages can be provided according to customer requirements.

        Taking into account the brittleness and cleavage characteristics of Gallium Oxide, the company has developed 2–6-inch Gallium Oxide single crystal substrate grinding and polishing equipment. Mature grinding, polishing, and cleaning process packages are available to customers as needed.

Gallium Oxide Single Crystal Substrates:

        As one of China’s earliest pioneers in Gallium Oxide single crystal growth research and a leading industry supplier, we are committed to providing global customers with high-quality Gallium Oxide single crystal substrates. Our product line includes 26 standard Gallium Oxide substrate products, covering sizes of 5×5.5 mm, 10×10.5 mm, and 2–6 inches. We also offer various sizes (e.g., 10×15 mm, 20×20 mm) and customizable electrical properties and crystal orientations (e.g., (100), (010), (001)) to meet the needs of high-quality epitaxial wafer development and mass production.

Gallium Oxide Epitaxial Wafers:

        Based on mature MOCVD (Metal-Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) platforms, our product line includes 15 standard Gallium Oxide epitaxial wafer products (sizes 10×10.5 mm, 2–6 inches) and customized 10×15 mm MBE Ga₂O₃ epitaxial wafers, providing customers with integrated “substrate-to-epitaxy” solutions. The epitaxial growth process uses precise process control systems, allowing customization of key parameters suc h as epitaxial layer thickness, doping concentration, and compositional uniformity according to customer requirements, supporting the development and production of devices across different power levels and functional types.

About Fujia Gallium

        Hangzhou Fujia Gallium Technology Co., LTD., founded on December 31, 2019, is the first "hard technology" enterprise registered by Hangzhou Institute of Optics and Fine Mechanics. With the vision of "Making the World Use Good Materials", the company focuses on the industrialization work of wide bandgap semiconductor Gallium Oxide materials. The core products include Gallium Oxide single crystal substrates, MOCVD epitaxial wafers, MBE epitaxial wafers, The VB method and EFG method crystal growth equipment, substrate grinding and polishing equipment, etc. provide systematic solutions for material development, accelerate the full chain connection of the ultra-wide bandgap Gallium Oxide industry, and promote the application of Gallium Oxide materials in power devices, microwave and radio frequency devices, and optoelectronic detection fields.The company's series of important achievements in the development of Gallium Oxide have been featured and reported by well-known media such as People's Daily, Xinhuanet, China Securities News, and The Paper.

        Corporate Honors:

        In 2022, it won the Zhejiang Province Science and Technology Small and Medium-Sized Enterprise; National High-Tech Enterprise in 2023; In 2024, it will be awarded as Hangzhou Enterprise High-Tech Research and Development Center and Zhejiang Special Small and Medium-Sized Enterprise. Obtain ISO9001 quality system certification in 2025 (No. 20225Q20294R0M) and 2024 Hangzhou “Rising Eagle” Enterprise. In the field of Gallium Oxide, the company is leading the drafting of China’s first national standard and has undertaken projects from the National Development and Reform Commission and the Ministry of Industry and Information Technology. It undertook one Gallium Oxide project for the National Development and Reform Commission and participated in three national and provincial projects from the Ministry of Science and Technology, Zhejiang Province, and Shanghai. In addition, it has obtained 12 international patents authorized (6 in the United States and 6 in Japan), 40 domestic patents authorized, 3 trademark certification and registration of "Fujia Gallium", and 4 software copyrights (crystal growth control software of "one-click crystal growth").