【World Express】Ohio State University selects AIXTRON CCS MOCVD System for Next Generation Gallium Oxide Device Development

      Ohio State University has acquired an AIXTRON CCS MOCVD system to advance GaO_x and AlGaO_x epitaxy on 100 mm wafers, boosting its research into next-generation wide and ultrawide bandgap devices.

      The Ohio State University (OSU) has purchased a Close Coupled Showerhead system for Metal-Organic Chemical Vapor Deposition (CCS MOCVD) from AIXTRON SE. The tool will be used for advanced epitaxy of gallium oxide (GaO_x) and aluminum gallium oxide (AlGaO_x) for materials and device development on 100 mm substrates.

      This state-of-the-art MOCVD system is helping to revolutionize the development of wide bandgap and ultrawide bandgap devices.

      The AIXTRON CCS MOCVD system is renowned for its reliability and performance, it enables the deposition of high-quality, uniform thin films for a broad range of compound materials. Gallium oxide and its alloys are known for their superior performance at higher voltages, frequencies, and temperatures compared to traditional semiconductor materials. The new tool will empower OSU researchers to explore the properties of these materials, develop novel device architectures, and push the boundaries of semiconductor technology.

      "We have had a great experience working with AIXTRON CCS reactors in the past for GaAs and InPmaterials. Their reactors are world-renowned for state-of-the-art uniformity, high material quality, and large process windows. AIXTRON has demonstrated this for gallium oxide (GaO_x) and aluminum gallium oxide (AlGaO_x), and we look forward to partnering with AIXTRON as we develop novel ultra-wide bandgap epitaxy layers and devices using this tool,” said Professor Steven A. Ringel, Associate Vice President of Research at The Ohio State University and Executive Director of Ohio State’s Institute for Materials and Manufacturing Research (IMR). He adds: “We particularly value the scalability the platform offers to us and our partners, while providing us with the immediate capability for up to 4” wafers. Hence, we look forward to taking the next step with AIXTRON."

      Dr. Felix Grawert, CEO of AIXTRON SE, shared his enthusiasm: "We are delighted to announce our partnership with OSU and the esteemed Professors Hongping Zhao, Siddarth Rajan, and Steve Ringel. Our CCS MOCVD tools have consistently demonstrated exceptional performance in supporting cutting-edge academic research and seamlessly scaling to Tier-1 industrial applications. We are particularly enthusiastic about the promising advancements in gallium oxide technology, which herald the next generation of power devices. This collaboration underscores our commitment to driving innovation and advancing research and development in the semiconductor industry.”

      The 100 mm Ga₂O₃-capable MOCVD reactor will be installed at Nanotech West Lab, a 3,500 m²

      shared user facility servicing the Ohio State semiconductor and materials community. The lab is operated by IMR, a multidisciplinary research institute that provides infrastructure support, development, and management of major research facilities across its signature research areas at Ohio State.