【Device Papers】Investigation of Optical Gate Materials Influence on the Performance of Vertical TFET for Deep-UV Detection

      Researchers from the VIT-AP University have published a dissertation titled "Investigation of Optical Gate Materials Influence on the Performance of Vertical TFET for Deep-UV Detection" in Silicon.

Abstract

      This manuscript presents a simulation-based study of a vertically structured Tunnel Field-Effect Transistor photosensor designed for deep-ultraviolet detection in the wavelength range of 0.20–0.30 µm. The device performance is evaluated using different optical gate materials, specifically gallium oxide (Ga₂O₃) and zinc oxide (ZnO), both of which demonstrate enhanced optical response across the deep-UV spectrum. The Ga₂O₃-based device exhibits high sensitivity of 13.06 × 10⁵, a light-to-dark current ratio of 122.32 dB, and strong spectral sensitivity, while the ZnO-based counterpart achieves a superior responsivity of 1.95 × 10⁸ A/W and detectivity of 3.46 × 10¹³ Jones. The study further explores the effect of optical gate thickness on key performance metrics, identifying optimal conditions for improved sensitivity and light-to-dark current ratio. The impact of gate-to-source overlap is also examined, revealing its role in enhancing band-to-band tunneling efficiency and boosting photoresponse. Moreover, the influence of back gate extension is analyzed, showing a significant reduction in dark current and improved electrostatic control. Overall, this work offers valuable design insights into material selection and device architecture for optimizing the performance of vertically structured Tunnel field-effect transistor deep-ultraviolet photosensors.

DOI：

https://doi.org/10.1007/s12633-025-03483-5