【Device Papers】High-Performance p-Cu₂O/n-β-Ga₂O₃ Heterojunction Barrier Schottky Diodes with Copper Contact

      Researchers from the Peng Cheng Laboratory have published a dissertation titled "High-Performance p-Cu₂O/n-β-Ga₂O₃ Heterojunction Barrier Schottky Diodes with Copper Contact" in Nanomaterials.

Abstract

      This study demonstrates the fabrication of high-performance p-Cu₂O/n-β-Ga₂O₃ heterojunction barrier Schottky (JBS) diodes using copper as a low-work-function anode metal. By optimizing the Cu₂O spacing to 4 μm, the device achieves a turn-on voltage of 0.78 V, a breakdown voltage of 1700 V, and a specific on-resistance of 5.91 mΩ·cm², yielding a power figure of merit of 0.49 GW/cm². The JBS diode also exhibits stable electrical characteristics across the temperature range of 300–425 K. Under a 200 V reverse stress for 5000 s, the JBS diode shows only a 4.16% degradation in turn-on voltage and a 1.15-fold increase in dynamic specific on-resistance variation, highlighting its excellent resistance to stress-induced degradation. These results indicate that Cu₂O/Ga₂O₃ JBS diodes are promising candidates for next-generation high-efficiency and high-voltage power electronic applications.

DOI：

https://doi.org/10.3390/nano15241840