【Device Papers】Enhanced performance in β-Ga₂O₃ heterojunction diode through double-layer p-GaN design

      Researchers from the Duy Tan University (DTU) have published a dissertation titled "Enhanced performance in β-Ga₂O₃ heterojunction diode through double-layer p-GaN design" in Materials Science and Engineering: B.

Abstract

      We propose an effective design to enhance both the electric field distribution and breakdown voltage in a p-GaN/n-Ga₂O₃ heterojunction diode by incorporating a double-layer p-GaN structure. This design achieves a breakdown voltage of 1094 V and a specific on-resistance of 66.0 mΩ·cm², resulting in a Baliga's figure of merit (BFOM) of 18.1 MW/cm². Compared to its single-layer counterpart, the double-layer structure boosts the breakdown voltage by 1.5 times while maintaining the diode's switching speed. Both device structures exhibit similar reverse recovery characteristics, with a peak reverse recovery current of 10.9 A and a recovery time of 69 ns. We further analyze the impact of layer thickness and doping concentration in the double-layer p-GaN structure, demonstrating that precise parameter optimization is crucial for maximizing breakdown voltage and enhancing the device's potential for high-power applications.

DOI：

https://doi.org/10.1016/j.mseb.2025.119158