【Device Papers】Modeling Single-Event Transient Responses in Ga₂O₃ MOSFETs Under Oblique Particle Irradiation

      Researchers from the University of Missouri have published a dissertation titled "Modeling Single-Event Transient Responses in Ga₂O₃ MOSFETs Under Oblique Particle Irradiation" in 2025 IEEE 12th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Abstract

      This study investigates single-event transient (SET) effects in β-Ga₂O₃ MOSFETs, a promising wide bandgap material for radiation-hardened power electronics. A two-dimensional TCAD model was developed with field-dependent mobility, thermal effects, and carrier recombination to simulate heavyion strikes under off-state bias. Results show that the device consistently exhibits a single transient current peak at the drain, originating from charge collection in the drain-side depletion region. The peak amplitude increases with both drain voltage and linear energy transfer (LET), reflecting the strong influence of electric field distribution on SET response. Angular incidence simulations further reveal greater vulnerability under oblique strikes due to enhanced field coupling. These findings highlight the critical role of device biasing and electrical field engineering in SET susceptibility and provide design guidelines for improving the radiation tolerance of β-Ga₂O₃ MOSFETs in space and high power applications.

DOI：

https://doi.org/10.1109/WiPDA63755.2025.11303408