【Device Papers】SEU Effect in E-Mode β-Ga₂O₃ MOSFET with Epitaxial Drift Layer at the Breakdown Region

      Researchers from the University of Arkansas have published a dissertation titled "SEU Effect in E-Mode β-Ga₂О₃ MOSFET with Epitaxial Drift Layer at the Breakdown Region" in 2025 IEEE 12th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Abstract

      Over the past decade, Gallium Oxide (Ga₂О₃) has seen noticeable technological strides, positioning itself as a frontrunner among ultra-wide bandgap semiconductor technologies. Ga₂О₃ has impressive inherent material properties such as critical field strength, generously adjustable conductivity, elevated mobility, and the capacity for scalable melt-based bulk growth, rendering it particularly suitable for power electronics applications. A primary focus lies in power electronics, where Ga₂О₃ is poised to offer top-tier performance at an economically viable level. Enhancement-mode Ga₂О₃ metal-oxide-semiconductor field-effect transistors (E-MOSFETs) have already demonstrated stable DC output characteristics under normal conditions. This stability is achieved through the incorporation of a low-doped body layer beneath the MOS gate, facilitating normally-off operation, while the epitaxial drift layer dictates on-resistance and breakdown voltage. Research has delved into the impact of doping concentration and drift channel layer thickness on device properties, aiming to design a device capable of withstanding a breakdown voltage of 680V. This study zeroes in on single-event upset (SEU) occurrences in Ga₂О₃ E-MOSFETs near the breakdown region. The analysis encompasses two types of events: SEU with normal incidence and oblique incidence. The insights gleaned from this analysis hold substantial potential for enhancing power electronics circuit simulations.

DOI：

https://doi.org/10.1109/WiPDA63755.2025.11303428