Exhibition Introduction
With the rapid development of emerging industries such as artificial intelligence, high-performance computing and data centers, embodied intelligence, low-altitude economy, smart vehicles, 6G, quantum technology, and brain–computer interfaces, high computational power, high energy efficiency, high-frequency speed, high integration, and high reliability have become core requirements for electronic and information systems. Advanced semiconductors are evolving beyond mere device performance improvements toward coordinated advancement across materials, devices, packaging, and systems, pushing the boundaries of technology and profoundly shaping the global competitive landscape of future industries.
The 2026 Future Industry New Materials Expo (FINE2026) will feature a dedicated “Advanced Semiconductor Exhibition”. The exhibition will focus on third- and fourth-generation semiconductor materials, including diamond, silicon carbide, gallium nitride, and gallium oxide, as well as advanced packaging technologies. Emphasis will be placed on the industrialization and application of advanced semiconductors, showcasing the latest progress in crystal growth, epitaxy, ultra-precision processing, testing, and analytical equipment systems. The exhibition will also explore applications and solutions in power devices, thermal management, quantum sensing, and other cutting-edge areas. Through material innovation and mature industrialization technologies, the expo aims to promote the broad adoption and deep integration of advanced semiconductors in future industries such as AI, smart manufacturing, and data centers.
Driven by end-user demand, the exhibition will systematically discuss advanced semiconductor materials, manufacturing processes, advanced packaging, and frontier applications, fostering industry–academia–research collaboration and accelerating the integration of advanced semiconductor technologies with future industrial development.
Time：June 10-12, 2026
Venue：Shanghai New International Expo Center (Hall N1)
