【Device Papers】Ultrathin amorphous-Ga₂O₃ vertical SBD-based bridge rectifier and its hybrid buck system

      Researchers from the Xi’an University of Posts and Telecommunications have published a dissertation titled "Ultrathin amorphous-Ga₂O₃ vertical SBD-based bridge rectifier and its hybrid buck system" in Journal of Semiconductors.

Abstract

      This paper demonstrated a monolithically integrated 200 nm-ultrathin amorphous-Ga₂O₃ vertical SBD-based bridge rectifier and its hybrid buck conversion system with a Si-MOSFET. The fabricated vertical Ga₂O₃ SBD exhibits excellent characteristics and a high breakdown electric field strength of 1.35 MV/cm. The bridge rectifier circuit maintains stable operation at high frequencies of 50 kHz. And the hybrid buck system composed of the Ga₂O₃ bridge rectifier and Si-MOSFET achieves adjustable step-down voltage output under the conditions of a 20 kHz switching frequency of Si-MOSFET and 50 Hz V_in. This work validates the practical value of Ga₂O₃ rectifiers in high-frequency conversion systems.

DOI：

https://doi.org/10.1088/1674-4926/25100008