【Device Papers】Modeling and Simulation of Tantalum and Gallium Oxide-based Memristors

      Researchers from the Alliance University have published a dissertation titled "Modeling and Simulation of Tantalum and Gallium Oxide-based Memristors" in 2025 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT).

Abstract

      In this work, Ta₂O₅ and Ga₂O₃ memristors are studied for non-volatile memory and neuromorphic computing. Since memristors have great write and read stability and can store data for a long time even without a power supply, they are expected to be useful in future memory technologies and artificial intelligence systems due to their unique switching behavior. In this work, MATLAB simulations were used to study major performance parameters such as switching speed and energy, endurance, retention, and efficiency of Ta₂O₅ and Ga₂O₃ based devices. The published work shows that Ta₂O₅ memristors have faster switching and high endurance, which is good for applications that involve frequent data writing and reading. On the other hand, Ga₂O₃ memristors have lower energy consumption, which is suitable for neuromorphic systems’ low power consumption. These results show the application versatility and importance of the materials in memristor architecture design, advancing fundamental and practical innovations into energy-efficient and high-performing computing for next-generation applications.

DOI：

https://doi.org/10.1109/CONECCT65861.2025.11306728